650V/750V/1200V/1700V/2300V SiC MOSFET Falcon Series

650V/750V/1200V/1700V/2300V SiC MOSFET Falcon Series
Ultralow Rdson*Qoss and Low Rdson at elevated temperature

Falcon M2 Series Portfolio

SiC MOSFET discretes

BVdss	RDS(on) (mΩ) @Vgs=15V	TO-252	QFN5x6	TO-220	TO-220FP	TO-247-3L	TOLL	DFN8x8	TO-251	TO-263-3L	TOLT (top side cooling)	TO-263-7L	QDPak (top side cooling)	TO-247-4L	T2-Pak (HU3pak) (top side cooling)
500V	5
500V	16					FF05016M2E-3	FF05016M2F			FF05016M2J
500V	18						FL05018M2F
500V	130	FF05130M2A	FF05130M2B			FF05130M2E-3	FF05130M2F	FF05130M2G
750V	7						FF07007M2F	FF07007M2G			FF07007M2K		FF07007M2L	FF07007M2Q	FF07007M2T
750V	9						FF07009M2F				FF07009M2K		FF07009M2L	FF07009M2Q	FF07009M2T
750V	20					FF07020M2E-3	FF07020M2F	FF07020M2G				FF07020M2J-7	FF07020M2L	FF07020M2Q	FF07020M2T
750V	40			FF07040M2C		FF07040M2E-3	FF07040M2F	FF07040M2G				FF07040M2J-7	FF07040M2L	FF07040M2Q	FF07040M2T
650V	80			FF06080M2C	FF06080M2D	FF06080M2E-3FF06080M2E-3	FF06080M2F	FF06080M2G		FF06080M2J		FF06080M2J-7		FF06080M2Q
750V	150	FF07150M2A		FF07150M2C	FF07150M2D	FF07150M2E-3		FF07150M2G		FF07150M2J
750V	300	FF07300M2A	FF07300M2B		FF07300M2D
750V	600	FF07600M2A
1200V	11													FF12013M2Q
1200V	13												FF12014M2L	FF12014M2Q	FF12014M2T
1200V	30					FF12030M2E-3						FF12030M2J-7	FF12030M2L	FF12030M2Q	FF12030M2T
1200V	60					FF12060M2E-3						FF12060M2J-7		FF12060M2Q
1200V	190	FF12190M2A		FF12190M2C	FF12190M2D							FF12190M2J-7
1200V	500
1700V	20													FF17022M2Q
1700V	45													FF17045M2Q
1700V	900				FF17900M2D	FF17900M2E-3			FF17900M2H			FF17900M2J-7
2300V	65													FF23065M2Q

Dr.SiC : SiC power stage with integrated gate driver

BVdss	RDS(on) (mΩ)	PQFN8x8
650V	80	FGDM06080M2
750V	150	FGDM07150M2
750V	300	FGDM07300M2

SiC power modules

BVdss	RDS(on) (mΩ) @Vgs=15V	Easy1B/2B compatible	Topology
1200V	30	FP12030FE1FB1T	E1B, four-pack
1200V	7	FP12007FE1HB1T	E1B, two-pack
1200V	13	FP12014FE1HB1T	E1B, two-pack
1200V	13	FP12014FE1FB1T	E1B, four-pack
1200V	13	FP12014FE13P1T	E1B, six-kpack
1700V	10	FP17010FE2HB1T	E2B, two-pack

SiC bare die for MOS-relay

BVdss	RDS(on) (Ω) @Vgs=15V	Bare Die	min BPO (μm)
1800V	7	FF157K0	125
2000V	20	FF2025KM2	80

Features

STATUS

Mass Production.

RELIABLE & RUGGED

100% Avalanche Tested
Short-Circuit Robust

Fast, Small, Powerful & Easy to Use

Our enhancement-mode SiC MOSFET provides Q_oss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The R_DS(on)@100^oC is only 10% higher than R_DS(on)@25^oC, enables better R_DS(on)@100^oC*Q_oss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (R_G(ext)). The much higher avalanche energy (E_AS) density (close to 20J/cm²) enables the E_AS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.

APPLICATIONS

Automotive, Industrial & Consumer

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Explore what you can benefit from our ultrafast SiC MOSFETs.