digest of research findings from scientific papers
There is an impression that the capability of small form factor surface mount device (SMD) packages in handling current and heat is limited. This is not true, at least the limitation does not come from the package itself. For example, in an application note, Infineon shows that the continuous current rating of power MOSFET
Silicon carbide (SiC) Schottky rectifiers are extremely fast with zero minority carrier (hole) reverse recovery charge (Qrr). The only charge participated during the switching of SiC Schottky Rectifiers is the majority carrier (electron) junction capacitive charge (Qc). The Qc of SiC Schottky Rectifiers does not change with temperatures or operation conditions such as forward current
Key Takeaways: Abrupt change of Cgd causes uncontrolled high dV/dt during switching transients results in oscillations and generates EMI. Abrupt change of Cgd with Vds has adverse effect on EMI/EMC. Device with smoother C-V curve performs better. Abrupt change of capacitive ratio Cgd/Cgs with Vds also adversely impacts EMI/EMC, smoother is better. A paper published
