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Why using newer Si SJ MOSFETs may not be a good idea for high frequency switching
Why using newer Si SJ MOSFETs may not be a good idea for high frequency switching

about SiC, digest, ideas

Why using newer Si SJ MOSFETs may not be a good idea for high frequency switching

By fastSiC|2020-07-23T16:52:00+08:00July 23rd, 2020|about SiC, digest, ideas|

Key Takeaways: Output capacitance Coss related loss is the major switching loss in resonant soft switching.New generations of silicon super junction MOSFETs (SJ MOSFETs) dissipate more energy per switching cycle than legacy ones.Hysteresis of new generations of silicon super junction is larger and increases with increasing dV/dt and peak Vds.Resonant switching techniques are used to reduce

A lower forward voltage drop does not always bring benefits

By fastSiC|2020-07-09T09:51:27+08:00July 16th, 2020|about SiC, digest, ideas|

Schottky barrier diode (SBD) is unipolar device, which means electron (majority carrier) is the only carrier that conducts current during the normal operation of Schottky diode. SiC, because of its wide bandgap, exhibits a higher Schottky barrier compared to Si and consequently a higher cut-in voltage (the forward biased voltage where the diode starts conducting).

Achieve zero switching loss with SiC MOSFET

By fastSiC|2020-07-09T09:51:14+08:00July 9th, 2020|about SiC, digest, ideas|

A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies. The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology