silicon super junction MOSFET Archives

C-V curve matters for quiet power electronics
C-V curve matters for quiet power electronics

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C-V curve matters for quiet power electronics

By fastSiC|2020-07-30T15:09:49+08:00July 30th, 2020|about SiC, digest, ideas|

Key Takeaways: Abrupt change of Cgd causes uncontrolled high dV/dt during switching transients results in oscillations and generates EMI. Abrupt change of Cgd with Vds has adverse effect on EMI/EMC. Device with smoother C-V curve performs better. Abrupt change of capacitive ratio Cgd/Cgs with Vds also adversely impacts EMI/EMC, smoother is better. A paper published

Why using newer Si SJ MOSFETs may not be a good idea for high frequency switching
Why using newer Si SJ MOSFETs may not be a good idea for high frequency switching

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Why using newer Si SJ MOSFETs may not be a good idea for high frequency switching

By fastSiC|2020-07-23T16:52:00+08:00July 23rd, 2020|about SiC, digest, ideas|

Key Takeaways: Output capacitance Coss related loss is the major switching loss in resonant soft switching.New generations of silicon super junction MOSFETs (SJ MOSFETs) dissipate more energy per switching cycle than legacy ones.Hysteresis of new generations of silicon super junction is larger and increases with increasing dV/dt and peak Vds.Resonant switching techniques are used to reduce