Key Takeaways: Output capacitance Coss related loss is the major switching loss in resonant soft switching.New generations of silicon super junction MOSFETs (SJ MOSFETs) dissipate more energy per switching cycle than legacy ones.Hysteresis of new generations of silicon super junction is larger and increases with increasing dV/dt and peak Vds.Resonant switching techniques are used to reduce
Schottky barrier diode (SBD) is unipolar device, which means electron (majority carrier) is the only carrier that conducts current during the normal operation of Schottky diode. SiC, because of its wide bandgap, exhibits a higher Schottky barrier compared to Si and consequently a higher cut-in voltage (the forward biased voltage where the diode starts conducting).
A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies. The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology
