Silicon carbide (SiC) Schottky rectifiers are extremely fast with zero minority carrier (hole) reverse recovery charge (Qrr). The only charge participated during the switching of SiC Schottky Rectifiers is the majority carrier (electron) junction capacitive charge (Qc). The Qc of SiC Schottky Rectifiers does not change with temperatures or operation conditions such as forward current
Many people consider that the design concept in power electronics system (usually in the tens to hundreds kHz range traditionally) is different from the high frequency circuit design (in the tens to hundreds of MHz range), but the story might have been changed by the wide bandgap (WBG) devices.WBG devices including silicon carbide MOSFETs
Travel further with less electricity SiC power devices have long been considered a perfect fit to electric vehicles (EVs). Toyota is the first to start road trials using SiC MOSFETs to drive traction motor in 2015. Toyota Starts Road Trials of EVs with Silicon Carbide Devices Later, Honda’s fuel cell vehicles Clarity became the first
