Knowledge can inspire imagination.
Achieve zero switching loss with SiC MOSFET
A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies. The study was conducted by Prof. Alex Q. Huang’s group at University of
SiC can be extremely fast
People would think of GaN (gallium nitride) when talking about high frequency or very high frequency switching. However, a study published by scientists from Stanford University showed that SiC can also be extremely fast. The scientists demonstrated that DC-RF
SiC is replacing Si in electric vehicles
Travel further with less electricity SiC power devices have long been considered a perfect fit to electric vehicles (EVs). Toyota is the first to start road trials using SiC MOSFETs to drive traction motor in 2015. Toyota Starts Road Trials
What is SiC and why is SiC for power devices
Rugged and High Efficiency Silicon carbide (SiC) is a compound semiconductor material with the energy bandgap of 3.2eV. The wide bandgap of SiC enables it to withstand roughly 10 times of electric field compared to conventional Silicon semiconductor (bandgap =