650V/750V/1200V/1700V/2300V SiC MOSFET Falcon Series
Ultralow Rdson*Qoss and Low Rdson at elevated temperature
Falcon M2 Series Portfolio
| BVDss |
Rdson (mΩ) |
TO252 QFN5x6 |
TO220 TO220FP |
TO247_3L TO247_4L |
TOLL | DFN8x8 |
TO263_3L TO263_7L |
TOLT (TSC) |
QDPak (TSC) |
T2PAK (HU3Pak) (TSC) |
|---|---|---|---|---|---|---|---|---|---|---|
| 500V | 16 |
|
FF05016M2E |
FF05016M2F | FF05016M2J | |||||
| 500V | 18 | FF05018M2F | ||||||||
| 500V | 35 | |||||||||
| 500V | 130 |
FF05130M2A FF05130M2B |
FF05130M2F | FF05130M2G | ||||||
| 650V | 80 | |||||||||
| 750V | 7 | FF07007M2Q | FF07007M2F | FF07007M2K | ||||||
| 750V | 9 | FF07009M2Q | ||||||||
| 750V | 20 |
FF07020M2E FF07020M2Q |
FF07020M2F | FF07020M2J_7 | FF07020M2L | FF07020M2T | ||||
| 750V | 40 | |||||||||
| 750V | 150 | FF07150M2A |
FF07150M2C FF07150M2D |
FF07150M2G | FF07150M2J | |||||
| 750V | 300 | |||||||||
| 1200V | 13 | FF12013M2Q | ||||||||
| 1200V | 30 |
FF12030M2E FF12030M2Q |
FF12030M2L | FF12030M2T | ||||||
| 1200V | 60 | |||||||||
| 1200V | 190 | FF12190M2A |
FF12190M2C FF12190M2D |
Ff12190M2J_7 | ||||||
| 1200V | 480 | |||||||||
| 1700V | 22 | FF17022M2Q | ||||||||
| 1700V | 45 | FF17045M2Q | ||||||||
| 1700V | 900 | FF17900M2D | FF17900M2E | FF17900M2J_7 | ||||||
| 2300V | 65 | FF23065M2Q |
Features
STATUS
Mass Production.
RELIABLE & RUGGED
100% Avalanche Tested
Short-Circuit Robust
Fast, Small, Powerful & Easy to Use
Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The RDS(on)@100oC is only 10% higher than RDS(on)@25oC, enables better RDS(on)@100oC*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (RG(ext)). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.
APPLICATIONS
Automotive, Industrial & Consumer
Falcon (Gen1) Series Portfolio
| BVDss |
Rdson (mΩ) |
TO252 QFN5x6 |
TO220 TO220FP |
TO247_3L TO247_4L |
TOLL | DFN8x8 |
TO263_7L |
SOT227 |
|---|---|---|---|---|---|---|---|---|
| 650V | 10 |
FF06010E |
FF06010F | |||||
| 650V | 20 | FF06020F | FF06020J_7 | |||||
| 650V | 30 | FF06030F | FF06030J_7 | |||||
| 650V | 60 | FF06060C | FF06060F | FF06060J_7 | ||||
| 650V | 100 |
FL06100C FF06100D |
FF06100E FF06100Q |
FL06100F |
FF06100J_7 | |||
| 650V | 150 | FL06150A | FL06150D | FL06150G | ||||
| 650V | 250 | FL06250A | FL06250D | FL06250G | ||||
| 650V | 320 |
FL06320C FL06320D |
|
FL06320G | ||||
| 650V | 500 | FL06500A | FL06500D | |||||
| 1200V | 14 | FF12014Q | FP1214RS27 | |||||
| 1200V | 20 |
FF12020E FF12020Q |
||||||
| 1200V | 40 |
FF12040E |
FF12040J_7 | |||||
| 1200V | 60 |
FF12060E FF12060Q |
||||||
| 1200V | 80 | FF12080J_7 | ||||||
| 1200V | 240 | |||||||
| 1700V | 900 |
FF17900E FF17900Q |
FF17900J_7 | |||||
| 750V | 15 | FF07015Q | ||||||
| 750V | 25 | FF07025Q | FF07025F | FF07025J_7 | ||||
| 750V | 35 | FF07035Q | FF07035F | FF07035J_7 | ||||
| 750V | 75 | FF07075F | FF07075J_7 |
Features
STATUS
Mass Production.
RELIABLE & RUGGED
100% Avalanche Tested
Short-Circuit Robust
Fast, Small, Powerful & Easy to Use
Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The RDS(on)@100oC is only 10% higher than RDS(on)@25oC, enables better RDS(on)@100oC*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (RG(ext)). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.
APPLICATIONS
Automotive, Industrial & Consumer
Get Pricing/Info
Explore what you can benefit from our ultrafast SiC MOSFETs.