Many people consider that the design concept in power electronics system (usually in the tens to hundreds kHz range traditionally) is different from the high frequency circuit design (in the tens to hundreds of MHz range), but the story might have been changed by the wide bandgap (WBG) devices.WBG devices including silicon carbide MOSFETs
Schottky barrier diode (SBD) is unipolar device, which means electron (majority carrier) is the only carrier that conducts current during the normal operation of Schottky diode. SiC, because of its wide bandgap, exhibits a higher Schottky barrier compared to Si and consequently a higher cut-in voltage (the forward biased voltage where the diode starts conducting).
Rugged and High Efficiency Silicon carbide (SiC) is a compound semiconductor material with the energy bandgap of 3.2eV. The wide bandgap of SiC enables it to withstand roughly 10 times of electric field compared to conventional Silicon semiconductor (bandgap = 1.1eV). The power devices are used to regulate the electric power (current and voltage). Ideally,
