Schottky barrier diode (SBD) is unipolar device, which means electron (majority carrier) is the only carrier that conducts current during the normal operation of Schottky diode. SiC, because of its wide bandgap, exhibits a higher Schottky barrier compared to Si and consequently a higher cut-in voltage (the forward biased voltage where the diode starts conducting).
A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies. The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology
People would think of GaN (gallium nitride) when talking about high frequency or very high frequency switching. However, a study published by scientists from Stanford University showed that SiC can also be extremely fast. The scientists demonstrated that DC-RF efficiency higher than 86% can be realized with a 17MHz class E inverter using SiC
