650V, 1200V, 1700V SiC MOSFET Falcon Series

650V, 1200V, 1700V SiC MOSFET Falcon Series
Ultralow Capacitance & Charge and Very Low Rdson@100C

Portfolio

Partname	Rated Voltage	Rated Rdson	Packages
FF06010	650V	10mΩ	TOLL,TO-263-7L, TO247-4L, TO-247-3L
FF06020	650V	20mΩ	TOLL,TO-263-7L, TO247-4L, TO-247-3L
FF06030	650V	30mΩ	TOLL,TO-263-7L, TO247-4L, TO-247-3L
FF06060	650V	60mΩ	TOLL,TO-263-7L, TO247-4L, TO-247-3L
FL/FF06100	650V	100mΩ	TOLL,TO-263-7L, TO247-4L, TO-220FP, DFN8x8, TO-252
FL/FF06150	650V	150mΩ	TO-252, DFN8x8, TO-220, TO-220FP
FL06250	650V	250mΩ	TO-252, DFN8x8, TO-220, TO-220FP
FL/FF06320	650V	320mΩ	TO-252, QFN5x6, DFN8x8, TO-220, TO-220FP
FL06500	650V	500mΩ	TO-252, DFN8x8, TO-220, TO-220FP
FF12014	1200V	14mΩ	TO247-4L, TO-247-3L
FF12020	1200V	20mΩ	TO-263-7L, TO247-4L, TO-247-3L
FF12030	1200V	30mΩ	TO-263-7L, TO247-4L, TO-247-3L
FF12040	1200V	40mΩ	TO-263-7L, TO247-4L, TO-247-3L
FF12080	1200V	80mΩ	TO-263-7L, TO247-4L, TO-247-3L
FF12240	1200V	240mΩ	TO-252, DFN8x8, SOIC-8, TO-220, TO-220FP
FF17035	1700V	35mΩ	TO-263-7L, TO247-4L, TO-247-3L
FF17900	1700V	900mΩ	TO-263-7L, TO247-4L, TO-247-3L

Features

STATUS

Mass Production.

RELIABLE & RUGGED

100% Avalanche Tested
Short-Circuit Robust

Fast, Small, Powerful & Easy to Use

Our enhancement-mode SiC MOSFET provides Q_oss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The R_DS(on)@100^oC is only 10% higher than R_DS(on)@25^oC, enables better R_DS(on)@100^oC*Q_oss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (R_G(ext)). The much higher avalanche energy (E_AS) density (close to 20J/cm²) enables the E_AS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.

APPLICATIONS

Automotive, Industrial & Consumer

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Explore what you can benefit from our ultrafast SiC MOSFETs.

Project Description