Silicon carbide (SiC) Schottky rectifiers are extremely fast with zero minority carrier (hole) reverse recovery charge (Qrr). The only charge participated during the switching of SiC Schottky Rectifiers is the majority carrier (electron) junction capacitive charge (Qc). The Qc of SiC Schottky Rectifiers does not change with temperatures or operation conditions such as forward current
Many people consider that the design concept in power electronics system (usually in the tens to hundreds kHz range traditionally) is different from the high frequency circuit design (in the tens to hundreds of MHz range), but the story might have been changed by the wide bandgap (WBG) devices.WBG devices including silicon carbide MOSFETs
Key Takeaways: Abrupt change of Cgd causes uncontrolled high dV/dt during switching transients results in oscillations and generates EMI. Abrupt change of Cgd with Vds has adverse effect on EMI/EMC. Device with smoother C-V curve performs better. Abrupt change of capacitive ratio Cgd/Cgs with Vds also adversely impacts EMI/EMC, smoother is better. A paper published
