fundamentals about SiC

Achieve zero switching loss with SiC MOSFET

By |2020-07-09T09:51:14+08:00July 9th, 2020|about SiC, digest, ideas|

A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies. The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology

SiC can be extremely fast

By |2020-06-23T17:29:09+08:00July 1st, 2020|about SiC, digest, ideas|

People would think of GaN (gallium nitride) when talking about high frequency or very high frequency switching. However, a study published by scientists from Stanford University showed that SiC can also be extremely fast. The scientists demonstrated that DC-RF efficiency higher than 86% can be realized with a 17MHz class E inverter using SiC

SiC is replacing Si in electric vehicles

By |2020-06-29T09:44:32+08:00June 24th, 2020|about SiC, applications|

Travel further with less electricity SiC power devices have long been considered a perfect fit to electric vehicles (EVs). Toyota is the first to start road trials using SiC MOSFETs to drive traction motor in 2015. Toyota Starts Road Trials of EVs with Silicon Carbide Devices Later, Honda’s fuel cell vehicles Clarity became the first

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