fundamentals about SiC
Key Takeaways: Abrupt change of Cgd causes uncontrolled high dV/dt during switching transients results in oscillations and generates EMI. Abrupt change of Cgd with Vds has adverse effect on EMI/EMC. Device with smoother C-V curve performs better. Abrupt change of capacitive ratio Cgd/Cgs with Vds also adversely impacts EMI/EMC, smoother is better. A paper published
Key Takeaways: Output capacitance Coss related loss is the major switching loss in resonant soft switching.New generations of silicon super junction MOSFETs (SJ MOSFETs) dissipate more energy per switching cycle than legacy ones.Hysteresis of new generations of silicon super junction is larger and increases with increasing dV/dt and peak Vds.Resonant switching techniques are used to reduce
Schottky barrier diode (SBD) is unipolar device, which means electron (majority carrier) is the only carrier that conducts current during the normal operation of Schottky diode. SiC, because of its wide bandgap, exhibits a higher Schottky barrier compared to Si and consequently a higher cut-in voltage (the forward biased voltage where the diode starts conducting).
