fundamentals about SiC
There is an impression that the capability of small form factor surface mount device (SMD) packages in handling current and heat is limited. This is not true, at least the limitation does not come from the package itself. For example, in an application note, Infineon shows that the continuous current rating of power MOSFET
Silicon carbide (SiC) Schottky rectifiers are extremely fast with zero minority carrier (hole) reverse recovery charge (Qrr). The only charge participated during the switching of SiC Schottky Rectifiers is the majority carrier (electron) junction capacitive charge (Qc). The Qc of SiC Schottky Rectifiers does not change with temperatures or operation conditions such as forward current
Many people consider that the design concept in power electronics system (usually in the tens to hundreds kHz range traditionally) is different from the high frequency circuit design (in the tens to hundreds of MHz range), but the story might have been changed by the wide bandgap (WBG) devices.WBG devices including silicon carbide MOSFETs
